| Dark current is a major source of noise current in quantum dots infrared photodetector (QDIP). It can be categorized into 2 groups, bulk dark current, and surface dark current. In this thesis, both groups are analyzed. Bulk dark current has been compared by different structure design, changing the thickness of the buffer layer between absorption regions of QDIP structure. Further, surface dark current have been analyzed by deposition of SiN x as a passivation film. Surface dark current was modeled and their influences on the performance of an infrared focal plane array (FPA) were predicted. Finally, performance enhancement (FTIR result, photoresponsivity, photodetectivity, and photoconductive gain) of the QDIP after dark current reduction has been measured and reported. |
