.inp / Ingaas Single-line Carrier Sub-study Of The Photodiode

InP/InGaAs uni-traveling-carrier photodiodes (UTC-PDs) with high speed andhigh-saturation output have been developed recently. The active area of UTC-PD isconsisted of a p-type photo-absorption layer and a wide-gap electron collector layer,within it only electrons are the active carriers.A photoreceiver consisting of an opticalpre-amplifier and UTC-PD can produce better characteristics than a conventionalphotoreceiver with electrical post-amplifiers, so the former can eliminate thepost-amplification electronics, extend the bandwidth, and thus simplify the receiverconfiguration.In this paper, the research of UTC-PD has been firstly put forward in the homecountry under the condition of experiment equipment that we can offer. During thecourse of the research, the main works are as following:1. According to the development of overseas UTC-PD and theoretical analysis,the structure of UTC-PD was designed, including the option and growth of epitaxialmaterial, the design of epitaxial layer structure, coupling, and packaging, etc.2. On the base of plentiful experiments, the fabricating technics of UTC-PD havebeen determined. The key technics that affect its performances have been discusseddetailedly, such as litho-potograph, selective wet chemical mesa etching, SiO2/SiNxpassivation , etc.3. The main performance parameters of UTC-PD have been tested. The darkcurrent of 160pA , saturation-output current of 22.84mA and 3dB bandwidth of15.13GHz have been measured at –4V bias.