Study On Recovery Time Of Silicon Based PIN Detector Irradiated By Millisecond Pulse Laser

Silicon-based PIN detector is an electronic device with high sensitivity.It has the advantages of high sensitivity,small size and fast response.It is widely used in the field of photoelectric detection,such as medical treatment,communication,ranging,printing,and so on.The photoelectric detector will be damaged when detecting laser signals,which will lead to the decline of the photoelectric performance of the detector and greatly affect the detection effect of the detector.Therefore,it is of great significance to study the recovery time of silicon PIN detector irradiated by a millisecond pulse laser.In this paper,the silicon-based PIN detector is taken as the research object.Macroscopically,the change of temperature rise and photogenerated current are taken as the breakthrough points,and microscopically,the non-equilibrium carrier lifetime is taken as the breakthrough point.The variation law of the recovery time of the silicon-based PIN detector after the soft damage caused by the millisecond pulse laser irradiation under different conditions is studied,and the influence mechanism of the millisecond pulse laser on the recovery time of the silicon-based PIN detector is analyzed.According to the classical heat conduction equation,the basic formula of thermal radiation and thermal convection,and the basic equation of semiconductor physics,the temperature rise model,and recovery time model of silicon-based PIN detector under millisecond pulse laser irradiation are established.The COMSOL Multiphysics software is used to numerically simulate the temperature rise and recovery time of the silicon-based PIN detector under the irradiation of a millisecond pulse laser.The simulation results show that the recovery time of the silicon-based PIN detector is mainly related to the temperature change.When the energy density is constant,the larger the pulse width is,the shorter the recovery time is;When the pulse width is constant,the greater the energy density,the longer the recovery time,the easier the material is damaged.The experimental platform was built,and the changes of the surface temperature,photogenerated current,and recovery time of the detector were measured online.The morphology,responsivity,and dark current of the damaged silicon-based PIN photodetector were measured offline.Based on the theoretical and experimental results,the quantitative analysis of temperature rise,photogenerated current,and recovery time realized,and the influence law and internal relationship of temperature on recovery time are studied.The above experimental results are highly consistent with the theoretical research results.The research work in this paper can provide some theoretical basis and experimental reference for improving the anti-laser reinforcement measures of silicon PIN photodetectors.