Array Fabrication Of The Titania-based Resistive Memory And Mechanism Analysis

The principal advantage of Non-volatile memory (NVM) is that the storage data can bekept for a long time without power supply. At present, the Flash memory of capacitorcharge type is occupying the major market share in Non-Volatile Memory. However, withthe continuous progress of the microelectronic process node, the critical dimension ofstorage cell become smaller, the Flash device based on traditional floating gate structure isencountering serious technology bottleneck. Flash device with the downsizing appearedmany shortcomings in the process of the high operating voltage, low speed, not goodrobustness, higher power, etc. Therefore, the study of a new generation of nonvolatilememory with more superior performance is around the corner. In recent years, there aremany nonvolatile memory have been proposed which are expected to replace Flashmemory，such as ferroelectric random access memory (FRAM), phase change randomaccess memory (PRAM), magnetic random access memory (MRAM)and resistive randomaccess memory (RRAM). Among them, RRAM has aroused the interest of researchersbecause of its high speed, speaking, reading and writing, low power consumption, highlevel of integration, low cost, compatible with modern CMOS technology.In this paper, we focused on prototypical resistive material titanium oxide, prepared16×16crossbar array to study the electrical characteristics and the physical mechanism ofTiO2-based resistive switching, the principal studies are as follows:(1) Based on introducing the basic laws of nano-processing, we have prepared a16×16nano-memory arrays, then discussed and analyzed effect from preparationprocess parameters of the device to the electrical properties and the morphology ofdevices;(2) Based on preparation and testing the TiO2resistance cells, we have investigatedthe relationship of physical parameters and resistive properties of resistance switchingdevices, and explored the influence of switching characteristics by the externalenvironment in preparation. Physical parameters include: metal electrode material,effective cross-sectional area, TiO2functional layer; Device resistive features include:switch resistance ratio, operation voltage, repetitive endurance and switching speed.