Fabrication And Study Of CdZnTe Field Effect Transistor Thin Film Detector

In recent years,CdZnTe thin film detectors increasingly cause more and more people's wide attention,because CdZnTe thin film detectors have simple production process,low cost,small thickness,light quality,can be made into large size,multi-layer and multi-functional laminated structure.In this paper,preparation and research of CdZnTe field effect transistor thin film detector are therefore proposed to solve the bottleneck problem facing the CdZnTe thin film detector development by changing the structure of CdZnTe thin film detector.In this paper,the bottom-gate and top-contact CdZnTe thin film transistor detector was fabricated by magnetron sputtering.The properties of thin films and transistors were investigated by step meter,X-ray diffraction(XRD),the atomic force microscope(AFM),semiconductor parametric analysis tester(KEITHLEY 4200-SCS)and other test and analysis equipments.The effects of preparation technology and process parameters of CdZnTe thin film transistor detector on the performance of CdZnTe thin film transistor detector were investigated.The results show that the performance of CdZnTe film with the SiO2 as the substrate is better when the sputtering power is 80W,the sputtering pressure is 1.5Pa,the sputtering time is 60min,and the Ar gas flow rate is 15.0sccm.CdZnTe films are suitable for active layers.When the thickness of the Si02 insulating layer is 330nm and the thickness of CdZnTe film is about 1944nm,the CdZnTe thin film transistor has a great performance.The smaller the roughness and the larger the resistivity of the CdZnTe film,the better the performance of CdZnTe thin film transistor has been shown.The effect of light on the CdZnTe thin film transistor is greatly improved,and the CdZnTe thin film detector will be more sensitive to the smaller working voltage.Comared with Cu electrode,Au electrode will promote the CdZnTe thin film transistor carrier injection and transmission better.