Fabrication And Study Resistance Machanism Of Cdznte Thin Films With Resistive Switching Properities

In recent years,resistive random access memory(RRAM)has become a potential candidates for next generation non-volatile memory.RRAM has has attracted wide attention due to its simple structure,fast switching speed,low power consumption,fast reading and writing speed.The II-VI compound semiconductor CdZnTe thin films material has excellent ferroelectric properties,and can be used in a RRAM of MIM structure.In this paper,preparation and study resistance mechanism of CdZnTe thin films with resistive switching properties are proposed.The aim is to obtain a CdZnTe thin films memory device with excellent performance and explore the mechanism of its switching characteristics.Based on the physical vapor deposition technique,CdZnTe thin films with resistive switching properties were prepared by RF magnetron sputtering.The effects of preparation conditions of CdZnTe thin films and electrode structure were investigated.The results show that the substrate temperature play an impotent role on the resistive properties of CdZnTe thin films.When the CdZnTe thin films were prepared at room tempreture,and the film exhibits a weak resistive property.The substrate is heated to obtain a CdZnTe thin films having a good resistive effect.When the substrate temperature,sputtering power and sputtering time are changed,there are few defects in the film.It is believed that the forming and rupture of the filament formed with In+ions in ITO thin films play a major role.After annealing,we found that the CdZnTe thin films resistive switching ratio increases with the increase of annealing temperature.The defect concentration of CdZnTe thin film was increased.At this time,the Cd vacancy plays a dominant role in the charge trapping and de-traping mechanism.When Cu is used as the top and bottom electrode material,the resistance switch ratio of the film is improved,and the cycle effect is relatively stable.The Schottky barrier is formed at the interface between the electrode and the CdZnTe film.The charge injection at the interface,the trapping and detrapping with the Cd vacancy,leads to the change of the Schottky barrier height,which is the main reason for the resistive properties of the CdZnTe thin film device.