CMOS image sensors(CIS)have been widely used in consumer electronics,security monitoring and industrial testing equipment.Occupying more than 90%of the market of image sensors with excellent cost performance.Thanks to the advantages of making large array sensors and imaging high-speed moving objects,the global-shutter-pixels(GS-pixels)have attracted more attention,and the small size GS-pixels with high performance have become the main research trends due to the shrinking of semiconductor processes.This thesis focuses on the voltage-domain GS-pixels based on the high-resolution novel image sensor developed by our research group.The pixel structure is proposed firstly,and the operation principle of the pixel and the key factors which affecting the performance of the pixel are analyzed.Sentuurus TCAD software is used to optimize the photosensitive cell,floating gate source follower,sampling transistor and reset transistor in the pixel.In addition,the electrical crosstalk between pixels is analyzed.Finally,the process parameters and flows of the pixels are given.After optimizing the structure and process,the optical performance of the pixel is analyzed by FDTD Solutions software.Furthermore,the optical performance of the pixel is improved from three aspects:Detection efficiency,Angle Response and Optical Crosstalk. |