The Research Of Ladder Patterned SOI MOSFET Device And Reliability Simulation

With the development of integrated circuit to the deep sub-micron technology era, the traditional body silicon CMOS device will be in a series of new problems,such as the theory of material technology and so on. These problems make silicon integrated circuit which is based on the traditional silicon MOS fall into the troubles. In order to solve these problems,the silicon on insulation (SOI) technology as a kind of applicable to the nanometer level semiconductor devices and new technologies have been proposed. Although SOI technology has many excellent performances, but the parasitic effects of SOI technology also impact on its development in the field of integrated circuit, especially the kink effect which has great influence on partial depleted SOI devices. Therefore, in view of the kink effect of traditional SOI MOSFET device, this paper proposes a ladder patterned SOI MOSFET device.Compared with the traditional SOI MOSFET device, the buried oxide layer of ladder type patterned SOI MOSFET devices only covers partially buried the "ladder" type of the underlying substrate,the neutral body area at the bottom of the channel can be directly linked to the underlying substrate by the body-contact opening. In the process of working, the structure will transfer the hole which impact ionization produced timely, at the same time, the body-contact opening also becomes the device internal cooling channels. This article uses the Silvaco officer process simulation software to simulate the process simulation of ladder patterned SOI MOSFET device.In study of the reliability of ladder patterned SOI MOSFET device, the Atlas is used for the 2?m,200nm and 40 nm ladder patterned SOI MOSFET device. Compared with the same size of the traditional SOI MOSFET device, the simulation results show that: no matter under what kind of feature sizes, ladder patterned SOI MOSFET device can suppress the kink effect,and as long as position is in the device inside, this suppression effect will be able to maintain as long as the body-contact opening posits in the depleted region of the device. And the length of the body-contact opening along the x axis will determine the kink effect suppression of the ladder patterned SOI MOSFET devices. At the same time, the simulation results also show that ladder patterned SOI MOSFET devices also has a certain suppression effect on the self-heating effect,ESD transient damage effect and so on.