Preparation Of ? Compound Semiconductor Thin Films And Research Of Gas Sensitive Properties

Among ? compound semiconductor thin films research is a hot research topic in recent year,such as gallium oxide(Ga2O3),indium oxide(In2O3),gallium nitride(GaN),indium nitride(InN),and the ternary compound indium gallium nitrogen(InxGa1-xN).They are a direct energy gap n-type semiconductor,which have good chemical properties and thermal stability,widely used in gas sensors,high temperature and high frequency power electronic devices,optoelectronic devices,solar cells,Internet plus,and other fields.Therefore,the thin films research has an important significance.In this paper,on the basis of the above thin film materials were studied under the preparation process and the gas-sensing properties.In this paper,we prepared the Ga2O3 and In2O3 thin films by magnetron sputtering method.They were grown on the Si(100)substrate.For the research of Ga2O3 and In2O3,we mainly studies the influence of sputtering pressure,substrate temperature,sputtering power.The results showed that the optimum experimental conditions of sputtering pressure is 0.6Pa,substrate temperature is 600?,and sputtering power is 150W for Ga2O3.At the same time,for In2O3,the optimum experimental conditions of sputtering pressure is 0.6Pa,substrate temperature is 600?,and sputtering power is 100W.Then we tested the gas-sensing properties.The test results showed that Ga2O3 films at operating temperature 250? enables fast response to methanol gas,and operating temperature is 300?for ethanol and 400? for acetone.Meanwhile it showed that In2O3 films has better sensitivity to ethanol and acetone at operating temperature 350?,and methanol at 300? respectively.The GaN films prepared by magnetron sputtering and high ammoniated method.We studied the substrate temperature,sputtering time,and ammoniation time factors effecting on the growth of GaN films.It reveals that GaN film has a better sensitivity to ethanol gas at operating temperature 300 ?,and acetone and methanol at operating temperature 350 ?.InN films on Si(100)were synthesized with adjusting process parameters by magnetron sputtering innovatively.While Indium oxide was used as In source,and N2 gas was used as nitrogen source.Comparing the experimental data we can find that InN have been synthesized at 400 ? of substrate temperature.The best quality of InN films substrate temperature is 600?,and pressure is 0.6Pa.On this basis,InxGa1-xN films on Si substrates were synthesized by magnetron sputtering and high ammoniated method,while indium oxide was used as indium target,and gallium oxide was used as gallium target,ammonia gas and nitrogen were used as nitrogen source.We mainly studies the influence of sputtering pressure,substrate temperature,sputtering power.Then we tested the gas-sensing properties.The results showed that InxGa1-xN film has a sensitivity to ethanol and methanol at operating temperature 250?,sensitivity is 1.37,and acetone gas at operating temperature 300 ?.