Fabrication And Performance Research Of M-S And P-n Structure Photo-detector Based On ZnO Nano-arrays

UV detector has been widely used in chemical sensors,water sterilization,space communication,industrial,flame sensing,astronomy and other fields.As a direct wide band gap semiconductor,the band gap width of ZnO nano material reach up to 3.37 eV at room temperature,At the same time,it has the advantages of wide range of resistivity,excellent UV response and low cost which make it suitable for the preparation of UV photo-detector.This paper selects the flexible Cu foil material as substrate,preparing ZnO nano-arrays/Cu and ZnO nano-arrays/Cu₂O/Cu photo-detectors using Cu-ZnO to form M-S Schottky contact and Cu₂O-ZnO to form p-n junction contact,systematically studying the photoelectric performance of the detector.The specific contents are as follows:1.Fabrication and performance research of ZnO nano-arrays/Cu M-S photo-detector.Preparing n-ZnO nano-arrays on the prepared high purity Cu substrate using low-temperature solution?hydrothermal?method,covering the ITO glass on ZnO nano-array as the top electrode to make the M-S photo-detector.Using scanning electron microscopy?SEM?,X-ray diffraction?XRD?testings to research the nature of the morphological,structure and luminescence properties of the material;Using 365nm and 385nm UV to illuminate the detector and studying the performance.The results show that:when the device is respectively under the irradiation of 365 nm and 385 nm wavelength light,the forward and reverse currents were both increased,and increased with the increasing light intensity.When the detector was illuminated by the 365nm UV,with the light intensity increasing from 0 to 0.6mW/cm²,under+3V bias,the current of the detector increased from5.4m A to 6.6mA;under-3V bias,the current increased from 3.3mA to 4.1mA.And when the detector was illuminated by the 385nm UV,with the light intensity increasing from 0 to0.6m W/cm²,under+3V bias,the current of the detector increased from 5.4m A to 16.1mA;Under-3V bias,the current increased from 3.3mA to 10.1mA.The reponsivities??I-I₀?/P?of forward and reverse currents could reach up to 1.8A/W and 35.7A/W(I₀ is the initial current,I is the current after UV,P is light intensity).2.Fabrication and performance research of ZnO nano-arrays/Cu₂O/Cu p-n structure photo-detector.First disposing the high pure Cu foil for dry oxidation,using atmospheric oxygen oxidation atmosphere to form p-Cu₂O films.Preparing ZnO nano-arrays on the formed Cu₂O film,covering the ITO glass on ZnO nano-arrays as the top electrode to make photodetector,using SEM?transmission electron microscopy?TEM??XRD and PL?photoluminescence?testings to research the nature of the morphological,structure and luminescence properties of the material;Using 365nm and 385nm UV source to illuminate the detector and studying the performance of the detector.The results show that:the currents of the detector were both increased with the light intensity increased under two wavelengths.When the detector was illuminated by the 365nm UV,with the light intensity increasing from 0 to 0.6mW/cm²,under+3V bias,the current of the detector increased from3.6m A to 11.7mA;under-3V bias,the current increased from 1.0mA to 4.0mA.And when the detector was illuminated by the 385nm UV,with the light intensity increasing from 0 to0.6m W/cm²,under+3V bias,the current of the detector increased from 3.6m A to 12.5mA;Under-3V bias,the current increased from 1.0mA to 7.0m A.The responsivities of forward and reverse currents could reach up to 14.1A/W and 17.2A/W.It is shows that the responsivities to the UV of ZnO nano-arrays/Cu₂O/Cu p-n structure photo-detector are obvious.