The Preparation Of Cuprous Oxide And Photoelectric Devices

Cu₂O has a direct band gap of 2.1eV,it is an excellent p-type semiconductor oxide material that can be applied to a field effect crystal devices, photocatalytic, photovoltaic and detection.However, Cu₂ O defects photoelectric properties of the material have a huge negative effect, so how to prepare high-quality Cu₂ O crystals and inhibit the production of the device manufacturing process defects is Cu₂ O material further to application constraints.The research paper prepared by thermal oxidation of Cu₂ O crystal method, Cu₂ O reveal the effects of defects on the crystal structure, optoelectronic properties.We further explore Si/Cu₂ O heterojunction photovoltaic device applications in the field of interfacial properties reveal the impact on device performance, the main contents and results are as follows:（1） The crystalline prepared by high temperature thermal oxidation method. The transmission of light is very good, the width of band gap of 1.96 eV, the average grain size is about 0.64 cm2, Hall mobility is 60-70 cm2 / Vs crystal wafer. And studied the thermal oxidation method of Cu₂ O crystal growth conditions on the crystal structure and crystal morphology, as well as the analysis of the photoelectric properties of the system.（2） The high purity Cu₂ O film was prepared by the method of thermal evaporation,using XPS analysis of the thin film deposition on the surface of Si separately methyl passivation treatment and hydrogenation of Si/Cu₂ O influence on the surface of the heterojunction. Come Si surface methylation treatment can inhibit the oxidation of silicon surface, compared to two kinds of processing methods that methyl passivation treatment can improve Si surface. Si/Cu₂ O heterojunction photoelectric performance won the stability of the device. And compared the Cu₂ O film deposited on Si pyramid structure and Si flat structure respectively two heterojunction device performance, optimization efficiency can reach 6.02% after deposition film thickness.（3） Preparation the Cu₂ O thin film by rf magnetron sputtering process, control of argon and oxygen flow rate, and sputtering power, the analysis of the thin film surface morphology,thickness and so on, optimize the sputtering process parameters to obtain the excellent photoelectric properties, a single phase of Cu₂ O film material. And passivation of methyl groups on the surface of a Si inhibit the oxidation of silicon surface, and growth pyramid structure effective increase in light absorption, thus to improve the Si/Cu₂ O heterojunction photoelectricperformance and obtain a higher device efficiency 1.05%.