Research On Responsivity Of High Intensity Laser Interaction With PIN Detector

The PIN silicon semiconductor detector has a wide application for its outstanding anti-exposure performance in the experimental study. But when receiving the energetic particle radiation, all semiconductor detector can have all kinds of radiation damage flaw in the semiconducting material, which influence the performance of the detector, such as: the drop of resolution , the drop of forward and reverse resistance, the increase of leaks electric current , the increase of misalignment and so on.The photo detector will be damaged when surveys the laser signal, which limited the survey function of photo detector greatly. In military, to meet the demand of electro-optical resistance, this article has carried on the basic research work to the damage principle of strong laser to photo detector. The paper embarked from the interaction mechanism between laser and photo detector, and three kind of laser damage photo detector effect have been discussed, as well as the responsivity change. In the experiment, the relationship between detector responsivity and laser power density , as well as energy density, is obtained. With the increasement of laser energy, the detector will be saturated and even damaged. And the responsivity will decrease. With stronger power, the responsivity of detector will be zero. In this thesis, considering the change of appearance and resopnsivity, the threshold of soft-damage and hard-damage is obtained. A effective way of the judgement of detector-damage is achieved. This paper has carried on the basic study work to laser damage of photo detector. These researches work has important meaning to laser damage to photo detector and the anti-damage.