The Characteristics Of The Quantum Dots Photodetectors And Readout

Recently,Quantum Dots Photodetector(QDPD)have made great progress on the performance and array size,which can be interconnected with CMOS(Complementary Metal Oxide Semiconductor)ROIC(Readout Integrated Circuit)for application.This paper makes research for QDPD and its readout.The main contents and the results are as follows:(1)The structure parameters of the QDPD including the QDs density,the QDs layer numbers and the GaAs thickness are changed by Apsys simulate the photocurrent and dark current including Photocurrent Dark current Ratio(PDR).The responsivity of the DB-DWELL-QDPD(Double Barrier Dots-in-well Photodetector),RCD-QDPD(Resonant Cavity Enhance Photodetector)and SAGCM-APD(Separated Absorption,Arading,Charge,and Multiplication Avalanche Photodiodes)are compared to research the sensivity at the same light intensity.(2)Photovoltaic and photoconductive QDPD were built and simulated by Apsys software to research the zero-drift mechanism of the I-V.The former is due to photovoltaic effect,and the latter is due to charge and discharge of capacitance which can be calculated by zero-drift voltage.(3)According to the characteristics of QDPD it's read out has been researched for to reach 120 dB high dynamic range and the 1.24 Ge-large charge handling capacity.The test results have been got by 300K and the low temperuture.