Field Effect Transistor's Performance Modulation And Its Application In Flash Memory Based On In₂O₃ Nanowires

In the field of microelectronic devices,semiconductor nanowires have attracted much attention for their unique properties.Especially,with the arrival of application bottleneck of Moore's law,the use of one-dimensional semiconductor nano wires as the basic building block of devices has important research significance.Among so many semiconductor materials,In₂O₃ material has been applied extensively due to its appropriate band gap,relatively higher electron mobility,optically transparent and gas sensing properties,etc.Based on these,we have done some works by use of In₂O₃.The detailed works are as follows:1.We have fabricated In₂O₃ nanowires by the method of chemical vapor deposition.The nanowires were characterized by SEM and XRD.At the same time,we have also fabricated some other micro nano structures of In₂O₃,such as octahedron,cuboid,layered nanotower and triangular plate.The growth mechanism of these structures are illustrated.2.The threshold voltage of In₂O₃ nanowire transistors were reduced after N ions were implanted into the gate dielectric layer.To illustrate the mechanism,chemically inert Ar ions were also implanted into the substrates with the same experimental parameters.Also,post-annealing experiments,XPS and KPFM characterization were conducted.Finally,we prove that implantation induced electron traps are the main factors which lead to the decreasing of threshold voltage.3.The back gate flash memory was fabricated by using In₂O₃ nano wire as the channel layer and graphene as the trap layer.The memory window of the device is 5.83 V.It has an on/off ratio up to 10⁴.The dynamic programming and erasing properties of the device are better than the device with Au particles as the trap layer.