Research On PUF Based On TDDB Effect

Nowadays,with the informationization of the modern society,information security becomes the focus of the public attention.With the continuous improvement and development of integrated circuit technology,an important means to protect information security-----password chip began to enter the people's field of vision,its application is more and more widely related to people's lives in all aspects.At the same time,we can hear the attacks on cryptographic chip occasionally.It is true that the threats on cryptographic chip are more and more serious.As a new security primitive in hardware security technology,physical uncloning function(PUF)uses the uncontrollable physical properties that come from the chip manufacturing process to produce uncloned input and output response pairs.The internal mapping is difficult to predict by modeling analysis.Therefore,its high security has attracted scholars' in-depth research.Currently,using the HCI(Hot Carrier Injection)effect,EM(Electromigration)effect and NBTI(Negative Bias Temperature Instability)effect of the MOS devices to achieve PUF(Physical Unclonable Function)has a certain result,but using the TDDB effect of the MOS devices to achieve PUF is still a vacancy.the research on TDDB effect has been relatively mature,So it makes sense to use the TDDB effect to achieve the PUF circuit.In this paper,a digital circuit based on arbitrator PUF is designed,this PUF utilizes the TDDB effect leakage current characteristic.The design work include: the study of the TDDB effect.Secondly,we obtained the characteristics of the leakage current of the gate oxide layer under the voltage and temperature.Thirdly,the design of the PUF circuit is described.Lastly,the verification of the pre-charge-extraction circuit and the pre-charge-sensitive amplifier circuits are carried out.Then according to the design requirements,we designed the logic control circuit,the comparator and the improved arbiter circuit.In the fourth chapter,the working principle and design method of the front charge sensitive amplifier are discussed in detail.Finally,the whole circuit is optimized and simulated.