Research On Desiges About High Efficiency Power Amplifier

In recent years,with the development of communication system,the demands for the power amplifier in the transmitter are growing.It is very important to design high efficiency,miniaturization,low cost and wide band power amplifier for communication system.In addition,with the development of the third generation semiconductor technology,also laid the foundation of the design of high power amplifier.This thesis mainly studies the design of high efficiency and broadband amplifier.Specific work is summarized as follows:the thesis first specifically introduces the index and classification of power amplifier,and the general process of power amplifier design.Then class F amplifier as a harmonic control amplifier,has many advantages and easy to design.Therefore,we first analyze the traditional structure of F amplifier and its difference with the actual design,and then improve the traditional F power amplifier,and based on this,we design a high efficiency F-class 2.14 GHZ amplifier.Through the simulation of ADS schematic diagram,when the input power is 28 dBm,the PAE is up to 83% and the output power is40.1dBm.And the processing test shows PAE is 77.1% at this time,which verifies the feasibility of the improved design?This Thesis introduces the traditional structure of E class power amplifier,and designs a high efficiency E-class amplifier work in the 2.1GHZ using GaN transistor.Which output matching network in the E-class amplifier based on the traditional structure of the increase in harmonic control circuit,and input matching network based on the source traction design.The test results show that the PAE is 76.28% when the input power is 26 dBm,and the output power is 38.8dBm.This thesis introduces several kinds of broadband matching methods,in which the Chebyshev low-pass filter matching method is relatively cumbersome,but the design is relatively simple and convenient,designed a Broadband Amplifier work in the 0.7-2.3GHZ make use of Chebyshev low-pass filter matching method.The simulation results show that when the input power is 28 dBm,the leakage voltage is 28 V and the gate voltage is-2.7V,PAE> 64% in the bandwidth of 0.8-2.3GHZ and the output power is more than 40 dBm.In the actual design of the amplifier,in order to reduce the gap between the finalmeasurement and simulation,this thesis combines closely schematic simulation with layout simulation.And take into account the actual DC collapse of the wire and the impact of the grounding hole,to maximize the simulation results and the actual test error,the actual test also proved the feasibility of this program.