A Study On The Modeling Of Millimeter-wave Transmission Line Based On Fractional-order Theory

With the rapid development of wireless communication technology,integrated circuit technology has been widely used in civil communications,military radar and wireless LAN and other fields,and the increase of frequency and bandwidth put forward higher requirements for the circuit performance.The performance of passive device is the main reason to limit the development of millimeter-wave circuit in which transmission line is the most basic passive compo nents and essential to the capability of the circuit.In the millimeter-wave frequency band,the electromagnetic field distribution of the device is extremely complex,loss and non-quasi-static effect become more obvious,resulting in millimeter-wave transmission line broadband high-precision model is difficult to establish,indirectly hinder the development of integrated circuit design.This thesis researches on transmission line modeling technology,including ana lysis,modeling,parameter extraction and verification of transmission lines.For the current mainstream CMOS technology,InP process and the new silicon-based heterogeneous integrated InP process,the transmission line model based on fractional theory is studied,and the equivalent circuit model is established and parameter extraction a nd verification are carried out to obtain a wide band frequency fractional transmission line model with high precision in the range of 0.1-220 GHz.The main research tasks of this thesis are as follows:1.This thesis mainly introduces the wave equation of millimeter wave transmission line and some main characteristic parameters of transmission line,and extraction method of distributed parameters.The loss mechanism of transmission line at high frequency is introduced,including conductor loss and substrate loss.And it gives a detailed analysis of some commonly used transmission line models and extraction methods their parameters.2.The 3D model in HFSS is built and a large number of EM simulations are carried out for the silicon-based heterogeneous integration process and CMOS transmission line structures,and then the characteristic parameters of the transmission line are obtained.The accuracy of the data is verified by the comparison with the actual measurement data,and the electromagnetic field simulation data is used as the basis of transmission line model study.Based on the electromagnetic field simulation of a large number of silicon-based heterogeneous integrated InP process and CMOS process,the correspond ing equivalent circuit model is established respectively,and the transmission line model is analyzed by fractional theory.3.This thesis extracts and validates the model parameters for transmission lines with different processes and structures.The model of transmission line in the structure of heterogeneous integration process is studied and presented,validated and analyzed the model.With the study of the microstrip transmission line in heterogeneous integration proces s,the parameters of transmission lines models with fractional-order are extracted and validated respectively.Compared with the integral-order model fitting results,the fractional-order transmission line model has higher precision.With the respective verification of the fractional-order model of the transmission line in CMOS process and InP process,it shows that the fractional-order model can achieve great precision for transmission lines in different processes,and verifies the wide applicability of the transmission line model in fractional-order.