Study On Bragg Grating Of DBR Semiconductor Lasers With 1064nm Emitting

1064 nm Distributed Bragg Reflector(DBR) semiconductor lasers have broad application prospects as seed laser for free space optical communication et al., which has characteristics of narrow linewidth and stabilize output. Bragg grating and ridge waveguide are the major structures of DBR semiconductor lasers. In this thesis, the systematic study has been carried in the design of Bragg grating structure and fabricating technology. The 1060 nm epitaxial structure has been grown by MOCVD. The ridge waveguide with 3.5?m width has been fabricated by wet etching. And DBR Bragg grating structure has been made by the325 nm holographic exposure system and the ICP dry etching. According to the practical testing and analysis, the period of Bragg grating is 960 nm, etching depth is 1.1?m. It's satisfied with the requirement of the 1064 nm DBR semiconductor laser. The devices was fabricated with a total cavity length of 1200?m consist of 400?m Bragg grating and ridge waveguide. The output power achieved 7mW under the injection current of 70 mA. The central wavelength of the device was 1064.63 nm and line width was 0.12 nm.