The Research Of ITO Thin Film Fabricated By HCD Method

With global energy shortage and increasingly serious pollution problems, energy conservation and environmental protection will be an important issue to be studied in the future. In the field of lighting, LED (emitting diode Light) as a new type of lighting products, has the advantages of energy saving, environmental protection, Long service life and so on. And it is also increasingly being widely concerned. At the same time, the ITO Indium (tin oxide) has the characteristics of both conductivity and light transmission, which is widely used as the current spreading layer of the GaN LED. Therefore, based on the ITO GaN thin film based on LED as the research object, this thesis analyzes properties of ITO thin films prepared by HCD(Hollow Cathode Discharge) method and tries to explore the effect of photoelectric performance of ITO thin film with different characteristics of the GaN LED.Firstly, in this thesis, the mechanism, application and development of ITO thin films were analyzed, and the difference of the properties of ITO thin films prepared by different preparation methods was studied. The thesis also analyzes the testing methods for the properties of ITO films and proposes requirements for current spreading layer of GaN based LED:the both conductive and transparent, good ohmic contact characteristics and good coating properties with other coatings.Secondly, the basic principle of HCD method (hollow cathode discharge method) and HCD equipment are studied. And then ITO thin films with different annealing conditions are prepared by HCD method. The influence of the thickness and annealing condition on the photoelectric properties of all the prepared ITO thin films are analyzed. Meanwhile, the optimum film thickness and the optimum annealing conditions of ITO are analyzed. At last,by changing the way of the deposition rate and the oxygen and argon flow rate, the effect of ITO thin films prepared under different conditions on the photoelectric properties of GaN LED are summed up.Finally, to verify the validity and optimality of the experimental data, the thesis compares the performance of ITO thin films prepared by HCD method and the traditional E-Beam method for the preparation of ITO thin films. And combined with ITO film related coating properties prepared with HCD method, the thesis completes a diplomatic mission of ITO thin films to make the GaN LED photoelectric performance to reach the optimum.