| V2O5is a widely used semiconductor material with excellent photoelectricproperties,and it can be used for the infrared detectors, gas sensors, humiditysensors and cathode materials. Pure V2O5thin films are almost non-conductiveand need to improve the electrical properties with the different preparingprocess to meet the requirements of devices.V2O5thin films were prepared on glass substrates by DC magnetronsputtering under the argon and oxygen mixed atmosphere. By XRD, four-probemeter, AFM, SEM and UV-VIS-NIR spectrophotometer, the structure,photoelectronic performance and surface morphology of the thin films werecharacterized.The influences of oxygen-argon ratio and annealing process on thestructure and photoelectric properties V2O5thin film were analyzed. In order todecrease the high resistance of V2O5thin film, we designed the V2O5/V/V2O5trilayer thin films. We also replaced the intermediate V layer with W and Tilayer to study the effects of the middle layer on the infrared absorptionproperties of the trilayer thin films.The influences of oxygen-argon ratio, annealing process and atomosphereon the structure and photoelectric properties of the V2O5thin film are researched.When the ratio of oxygen to argon is1.5:25. and annealing temperature is450℃for60minutes under air atmosphere, V2O5thin films show better structure andphotoelectric properties. Meanwhile, the effects of the sputtering time ofintermediate V layer on the properties of V2O5/V/V2O5trilayer thin films wereinvestigated. The results show that the annealed V2O5/V/V2O5trilayer thin filmwith25minutes of V layer deposition process has a square resistance of38.46K, and the resistance-temperature coefficient of-2.18%K﹣1. Besides, theeffects of intermediate layer on V2O5/V/V2O5trilayer thin films were alsoinvestigated by replacing the V layer with W and Ti. The preparedV2O5/W/V2O5and V2O5/Ti/V2O5trilayer thin films show different infraredabsorption characteristics from V2O5/V/V2O5trilayer thin film. |
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