The Application And Improvement For HDPCVD Process

Along with the development of semiconductor integrated circuit,requirements for the miniaturization and micromation technology are higher and higher. The Chemical Vapor Deposition technology has a very important effect. And as an excellent Chemical Vapor Deposition technology, High Density Plasma Chemical Vapor Deposition technology plays an important role because of the superior performance in semiconductor integration circuit.The research object of this thesis is mainly about High Density Plasma Chemical Vapor Deposition technology on the basis of discussion of Chemical Vapor Deposition technology. Chemical Vapor Deposition technology is discussed as an important step in semi-conductor integration circuit. The differences and relations of four kinds of common Chemical vapor deposition processes have been compared. The process characteristics, process principle, deposition equipment and measuring of High Density Plasma Chemical Vapor Deposition process have been explained in detail.The problem of low yield caused by the plasma damage defects during the production of metal layer are analyzed and studied.Based on the mechanism of plasma damage in the metal layer, formation reasons and influence factors and the summary of experience and experiments, the methods to reduce metal plasma damage phenomenon are proposed, which may improve the production efficiency and process stability, increase the reliability of the product, and enhance the competitiveness of the enterprise in the industry.