Research On The Synthesis Of Quality Graphene By Chemical Vapor Deposition(CVD) And Its Properties

In recent years, the approach of synthesizing graphene bychemical vapor deposition (CVD) develops quickly. But it is very difficultto realize the controlled growth of large-scale high quality graphene onmetal Ni and Cu by CVD. Meanwhile, in order to make the approach ofsynthesizing graphene be compatible to contemporary industrialsemiconductor technology, the graphene need to be directlysynthesized at relatively low temperature on oxides. Based on theproblems mentioned above, the main contents will be discussed inthese following chapters:The first chapter presents a brief review of properties of grapheneand a summary of the CVD growth of graphene on Ni, Cu and oxidessubstrates in these years. The main goals and contents of research in thispaper are also included.Chapter2shows several characteristic tools of graphene such asRaman Spectrum, Scanning Electron Microscope (SEM), OpticalMicroscope, Atomic Force Microscope (AFM), Four-point Probe,UV-VIS-NIR Spectrophotometer (NKD-8000) and so on.Chapter3demonstrates how to realize the controlled growth ofhigh-quality single-layer graphene on Ni substrate by cold-wall CVD.Through shortening the growth time to10s, the result indicates that thedirect deposition mechanism of graphene has occurred on the Ni foil.This growth mechanism of graphene is similar to atomic layer deposition(ALD). Compared with traditional carbon precipitation mechanism, itwill have advantages on the controlled growth of graphene. In addition,the result also shows that the sheet resistance of graphene decreaseswith the lower flow of H2during the growth stage of graphene. The highquality graphene with sheet resistance367?, which could becompatible to the result from the Cu foil, was obtained without H2. The contents of Chapter4are that a10×20cm2graphene film wassynthesized on Cu foil by home-made hot-wall CVD. The heating regionof the hot-wall CVD could be slided so that the sample could beheated rapidly when the temperature reached the goal temperature.Rapid heating procedure could facilitate the growth of Cu domain,which is benefit to the growth of large size crystal-graphene. Base onthe result of high quality graphene obtained from the Ni foil without H2,the graphene was synthesized on the Cu foil without H2. Results showthat the growth time will be shortened and the graphene has highquality without H2during the graphene growth stage.In attempt to realize compatibility between graphene growth andthe contemporary microelectronic industries, how to synthesizegraphene at relative low temperature on the surface of oxides by CVDis included in chapter5.The last chapter summarizes the main topics of this article, andprospects the future research of graphene.