Waveguide Epitaxial Growth Of Photonic Integration

Photonic integration technology is the most promising areas of optical fiber communication,and is the best way to meet future demand for network bandwidth. Compared with traditional discrete OEO(Optical-Electronic-Optical) processing, photonic integrated chips can reduce costs and complexity, and have the advantages of small power consumption, high performance and high reliability, so they will help to build a new network structure with more nodes. In the optical module of photonic integration, the devices are connected with optical waveguide made through material growth and lithography, which not only eliminate the tedious process of alignment and coupling between the optical fiber and the chip, but also reduce loss and improve the packaging reliability.In this thesis, Metal-Organic Chemical-Vapor Deposition(MOCVD) equipment was used to grow n-InP layer, InGaAsP waveguide layer, p-InP layer and an ohmic contact layer(p-InGaAs), respectively. Double-crystal X-ray Diffraction(XRD), Electrochemical Capacitance-Voltage profiler(ECV), Photoluminescence spectrum(PL) and atomic force microscope(AFM) instruments were used to test and analyze the structure and quality of epitaxial materials. After finishing the growth of the entire waveguide structure, diffraction curves and carrier profiles obtained through XRD and ECV, showed that either lattice matching or carrier concentrations were relatively good to meet the design goals. In addition, InGaAsP/InP quantum well were grown and laid the foundation for the growth of post-active waveguide layer.For the problems that occurred when testing the carrier concentration of the InP-based semiconductor material, a new alternative etching solution was found, so the test efficiency had been greatly improved.