The Design And Simulation Of Neural Signals Reading Biological Sensitive Field Effect Tube

In the field of microelectronics,the structure and production process of Field effect transistor have significant characteristics, and it is the basic component unit of integrated chip.as early as in the last century 60 s, it was started to apply it to the bioelectricity physiological characteristics of research. Since the advantages of mass-production and low cost, industry also takes a great interest in FET. With the support of national natural science foundation,the paper researched field effect transistor interface model and the performance parameters, by the way,had made a preliminary attempt to simulate the interface of field effect tube model and procession. The completion of the work are as follows:Firstly, the paper researched how field effect transistor worked, also the solution interface model of field effect transistor on the basis of its working principle, and analyzed the biological characteristics of the sensitive field effect transistor. Secondly, in order to improve the traditional structure of the field effect transistor,the paper introduced the structure of "micro hole", which is used carved soft technology to form the pattern of neural network so as to improve the field effect transistor.Then, for the proposed new structure, we use the IC process simulation software Silvaco to complete the overall design and simulation, and some of these processes were relatively detailed described. Then in this paper, the overall device model are simulated on the basis of simplified interface contact model.In this thesis, we mainly simulated PMOS of neural signals read field-effect tube and the back-end process.In simulation program of the PMOS, with the aid of Silvaco module, we extracted parameters of the PMOS, which is convenient for us more clear understanding of our the structure, including source/drain junction depth, threshold voltage, gate oxide thickness, source/drain resistance of diamonds, LDD square resistance, etc.Using Silvaco Utmost module, we extracted BSIM3 models of PMOS, which supported the model parameters for PMOS, which provided technical indicators and requirements for the subsequent amplification circuit.