The Dfm Of Power Mosfet

Power semiconductor devices is an important component of the power electronics field, it is realized with low & high voltage between the bridge. In switching power supply, frequency conversion, display, energy saving, ecological environmental protection have broad application prospects. Power semiconductor devices is to solve the electronic field power amplifcation and power control, and the need to develop, moreover, with the power of electronic technology has grown in strength had power electronics this new branch.In 1979, H.W.Collins etc. Put forward a vertical double-diffusion MOS structure. VDMOS is microelectronics and power electronics integrate a new generation of power semiconductor devices. Represented by VDMOSFET typical MOS semiconductor power devices is now the mainstream of the field of power electronic devices, power VDMOSFET is the power of the power electronics device, it is one of main products in the power switch, the power amplifier applications increasingly wide fields. Is the electric field effect VDMOSFET control current, are voltage-controlled device with high input impedance, low resistance, and thus drive power is small, large output current, switching speed, high frequency, no secondary breakdown, safe work area wide, cross-wire is good, amplified distortion, thermal stability is good.This paper summarizes the development history of power MOSFET at home and abroad and the research present situation, proposed this topic research significance and value, Discusses the structure and characteristics of MOS and MOSFET device in the basic structure and working principle are introduced in this paper. Then, the paper analyses the power VDMOSFET resistance, threshold voltage and other parameters of the various factors. Using the computer simulation software, through a process conditions, and in accordance with the structural parameters of selecting the appropriate area, make chips, thereby minimizing cost reduction.The realization of computer simulation VDMOSFET power Device is adopted a new generation of TCAD tools. Including:Process simulation tools Sentaurus- Process, Sentaurus benefit-Editor Device Structure editing tools, Sentaurus-Device physics simulation tools, the integration of the virtual design platform for semiconductor devices, etc Sentaurus WorkBench manufacturability design tools.The research work is Sentaurus using core stage process tools, build process documents and parameters selection for correction of simulation, the VDMOSFET device used to Sentaurus device simulation tools, and the VDMOSFET device simulation of many parameters VDMOSFET devices. Finally, the power of the VDMOSFET device, and the characteristic curves of an in-depth analysis and discussion.Results show that, through the use of semiconductor devices manufacturability design tools for computer simulation and model.comparing device can achieve the parameters in the level of domestic and foreign similar studies.