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New Type Of Phase Change Random Access Memory Cell Simulation Software

Posted on:2016-04-24Degree:MasterType:Thesis
Country:ChinaCandidate:H CaoFull Text:PDF
GTID:2348330479453203Subject:Software engineering
Abstract/Summary:PDF Full Text Request
Phase-change random access memory is a kind of non-volatile solid-state memory which use of the storage medium in the crystalline state at low resistance and in the amorphous state at high resistance to store information, it has superior features include non-volatile storage, anti-radiation characteristics, fast read and write characteristics, etc., are most likely to become the mainstream of the next generation non-volatile memory.Considering the mechanism of phase change memory cell, memory cell circuit, drive affect the circuit and the material properties of the medium to the memory characteristics, use VC ++ mixed programming MATLAB, combined with Hspice circuit simulation software, designed to the new phase-change memory cell simulation software that contain the landing module, circuit simulation module, memory cell performance simulation module and graphical output module.VC ++ external call Hspice in 0.18?m CMOS process for phase change memory cell external reader and write circuit simulation.Write circuit can be obtained that pulse width is adjustable between 4ns ~ 150 ns and pulse amplitude is adjustable between 0.25 V ~ 3.0V; reading circuit includes a current source and read sense amplifier; using VC interception the pulse.lis file data values witch generated by Hspice to obtain the pulse data that used at COM component calculated.The new phase change memory cell simulation software, including Client / Server structure, four functional modules and code. Using a common application software structure: three-tier structure.Presentation layer: GUI(Graphical User Interface), business logic layer(function realization), data services layer(data management).Using MATLAB COM component technology, VC and MATLAB mixed programming to complete storage performance simulation for bottom-up cell structure, edge-contact cell structure, double-confine cell structure and bottom-up with heat-up layer structure.Then the software will be compiled for the release version and the performability program CRAM.exe can run in different computer.Directly copy the project files to the computers witch needs to run the software then completed system files configuration and registering components, the CRAM.exe can work succeed.In addition, integrated circuit simulation, emulation memory performance simulation software simulation of four memory cell structures; The results show that: for the different structural, material parameters and pulse data values has a greater influence on the storage characteristics of the phase change memory cells.Simulation software emulation for memory cell capable can providing guidance in the design of external driving circuit, the memory cell structure design.
Keywords/Search Tags:Phase change memory, software development, VC programming, COM component, Integration technique
PDF Full Text Request
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