Damage Mechanism Of Electromagnetic Pulse Bomb On Typical Electronic Devices

Since the 21 st century, with the integrated development of military equipment,the information and intelligence of weapon system is greatly improved. The information network that complete coverage of Land, sea and air has gradually become a national offensive and defensive strategic position. All kinds of electronic system of information network has been established as the primary target of the attack, and the research on all kinds of electromagnetic pulse weapon is gradually deepening. This article mainly aims at the study of damage mechanism of the electromagnetic pulse bomb. On the base of analyzing the destruction area and powerful electromagnetic pulse bombs by MATLAB and origin, we use simulation software ISE-TCAD to electromagnetic simulation the electromagnetic pulse bomb damage mechanism on the typical electronic devices. And it provides a certain theoretical ideas and simulation parameters for the next research step.In the calculation of this article, first of all, on the base of theory analysis, we calculate the change regularity of the signal within 50 meters after the electromagnetic pulse bomb' explosion. Then, on the base of the data calculated, we observe the electromagnetic pulse bomb's damage mechanism of the target area on the typical electronic devices NMOS tube by the ISE-TCAD electromagnetic simulation. Through the observation, we found that the electromagnetic pulse produced by electromagnetic pulse bomb burned the NMOS device manly occurred at the drain and source region and the substrate PN junction department. Under the effect of electromagnetic pulse, the electric field intensity, current density and temperature inside the device presents the concentration distribution and reach the peak value at the bend. Accompanied by periodic changes in the signal, the three show cyclical changes undering the overall upward trend. Further in the comparison of the electromagnetic pulse damage effects of different amplitude and frequency parameters, it can be found that the time of the electromagnetic pulse bomb damaged electronic devices is proportional to the voltage amplitude of the pulse, and is inversely proportional to the frequency of the pulse signal. Finally, based on the research achievements on the damage mechanism of the electromagnetic pulse bomb in this paper, we analyzed and discussed its role in guiding future research on electromagnetic pulse bomb in the next step of research and actual combat.