Research On The Damage Effect Of Electromagnetic Pulse On Solar Cell Array Battery Circuit

In recent years,with the rapid development of the electromagnetic pulse(EMP)weapon,the threat facing space spacecraft is becoming increasingly,solar cell array is an important part of spacecraft,its reliability is very important to ensure the operation of the spacecraft.Based on the analysis of the electromagnetic pulse coupling mechanism of the electronic circuit and the characteristics of the solar cell array battery circuit,the silicon solar cell and metal oxide semiconductor field effect transistor(MOSFET)is chosen as the key point of this research.In this paper,the device model of silicon solar cell is established,and the output characteristics of the battery are obtained by simulation.Then through the joint simulation of device-circuit,the damage effect of silicon solar cell under EMP injected is studied,the relationship between output characteristics of silicon solar cell and the parameters of load voltage is obtained.At the same time,the relation between the conversion efficiency of silicon solar cell and the variation of the load voltage is also obtained by curve fitting.The MOSFET device model is built by using the semiconductor device simulation software,the correctness is validated by simulations of the output characteristics and transfer characteristics for the device.The damage mechanism and process were studied by simulating the internal temperature response of MOSFET under the EMP injected into the drain electrode.In addition,the law between damage effect and the parameters of step voltage is also obtained,the internal temperature rise process and the maximum temperature in MOSFET device had nothing to do with pulse rise time when the voltage amplitude of step pulse is fixed.The burnout time and pulse rise time satisfies linear relationship;when the pulse rise time stays the same,with the increase of voltage amplitude,the rise of temperature in the device speeds up,the highest temperature that the device can achieve also increases.The burnout time of the device and voltage amplitude satisfies power function relationship.