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Preparation Process Of Sr2TiO4 Powder, Thin Film And Research Of Formation Mechanism

Posted on:2017-03-23Degree:MasterType:Thesis
Country:ChinaCandidate:F Y LiaoFull Text:PDF
GTID:2310330512464449Subject:Microelectronics and Solid State Electronics
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Sr2TiO4 is a two-dimensional layered perovskite oxide with wide band gap. It not only has more extensive space changes and more special structural characteristics than perovskite oxide ?SrTiO3?, but also show many specific electromagnetic characteristics, such as dielectric, thermoelectricity, superconductivity and ferromagnetic and so on. Thus it has gradually become a new kind of promising inorganic material like perovskite oxide. But the structural stability of Sr2TiO4 is poor, which leads to the preparation of single-phase Sr2TiO4 is difficult. So the key problem is how to realize the preparation of high purity Sr2TiO4 material. In this paper, we researched the technological condition of preparing Sr2TiO4 powder by Sol-Gel method, dielectric properties of Sr2TiO4 powder and photoluminescence properties of Pr doped Sr2TiO4 powder. We also explored the difficulties of the preparation of Sr2TiO4 thin films by Sol-Gel method and magnetron sputtering method and the growth mechanism of this kind of film.Firstly, we studied the influence of four different precursor fluid systems of sol-gel method to the structure and morphology of Sr2TiO4 powder. The results show that the purity of sample is highest when the precursor fluid system was annealed at 1200? for 12 h, the shape of the samples is irregular, the particle size in microns and additives in the precursor solution have important influence on the morphology of samples. What's more, the complex permittivity of Sr2TiO4 powders prepared by Ethylene glycol methyl ether-ice acetic acid system is the largest, Pr doped Sr2TiO4 powders have strong photoluminescence peak in red light range.Secondly, we researched the influence of different technological conditions of Sol-Gel method to the structure and morphology of thin film. The results show that the thickness of film is an important factor which affects the crystalline structure of the film. When the film thickness is in deep submicron level, the thin film is SrTiO3, but when the film thickness is in micron scale, the thin film layer near the substrate is SrTiO3, the surface layer of the thin film is Sr2TiO4. Which may be result from thin film is subjected to the action of the force field from the substrate surface, lead to uneven distribution of elements and different force on atoms.Finally, we studied the influence of different technological conditions of magnetron sputtering method on the structure and morphology of thin films. The results show that the preparation of thin films in different argon oxygen ratio, substrate temperature, gas pressure, sputtering power and different types of substrates which under the bombardment of Sr2TiO4 target material are SrTiO3 thin films. Film thickness has important influence on distribution of elements, with thin film thickness increases from deep submicron to micron level, strontium titanium ratio changes from less than 1 to 2. The lack of Sr in the film and the uneven distribution of Sr lead to the failure of preparing Sr2TiO4 thin film.
Keywords/Search Tags:Sr2TiO4, Sol-Gel method, Magnetron sputtering, Growth mechanism, Photoluminescence
PDF Full Text Request
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