Effect Of ZnO Films Prepared By Magnetron Sputtering Photoluminescence Properties Of N-doped

Zinc oxide(ZnO) is a wide band gap semiconductor material that has some excellent feature in optics. The band gap width is 3.37 eV in greenhouse, and the energy of exciting binding is 60 meV. It is considered the best substitute material of GaN because it can launch the blue and purple. However, ZnO has a high concentration in body carrier, which is difficult to make an excellent P-type ZnO thin film. That is why there has no breakthrough in terms of light-emitting devices in Semiconductor Materials. In addition, low impurity solubility and deep acceptor level is the biggest problem, and the lack of suitable acceptor doping element is another difficult factor to obtain P-type doped ZnO films.In order to obtain a high-quality and low-cost P-type ZnO film, this paper uses the way named RF magnetron sputtering. There has a membrane on Si by N-doped ZnO thin films, because N is considered the best effective materials to obtain p-type ZnO. The doping element of N and O is very closed, it is easier to form NO occupy O vacancy defects, so they can remain the film among N, For ZnO thin films prepared by X-ray diffraction(XRD), photoluminescence(PL), Hall(Hall), respectively, to study the effects of structural characteristics of N-doped ZnO thin films, optical and electrical properties. The results show that the intrinsic band gap of ZnO films is 3.3eV, by nitrogen-doped optical band gap of ZnO thin films at 3.28 eV ~ 3.34 eV,P-type ZnO film is to achieve transformation, at the same time, the carrier concentration from 1.968 × 1017cm-3 was reduced to 6.022 × 1015cm-3.