Method Research About Correction For Soft Error And Detection For NBTI Induced Error Based On ECC Circuit

With the process of reducing the size of the device, a static random access memory(Static Random Access Memory, SRAM) distance between adjacent memory cells become increasingly close, and ground space of protons, neutrons more sensitive to particles and cosmic rays and other ionizing radiation. Single-particle ionizing radiation incident caused by the first flip(Single Event Upset, SEU), and multi-bit error flip(Multiple Bit Upset, MBU) were significantly increased. Flip has become the anti-radiation memory SRAM reinforcement of research.Meanwhile, the proportion of CMOS VLSI development, and other devices shrink, decreasing the thickness of the gate dielectric layer, negative bias temperature instability(Negative Bias Temperature Instability, NBTI) effect on the PMOS device and circuit reliability effects become more pronounced, becoming one of the factors affect the life of devices and circuits can not be ignored.On the basis of in-depth study of the impact a single memory cell node and a number of flip flip and NBTI effect of aging on the device, from the perspective of circuit-level and system-level departure reinforcement methods, the use of low complexity step majority logic decoding, a small delay and high error correction error detection capability, designed for 32-bit memory number of anti-rollover reinforcement program to achieve 32-bit data stored on the memory error detection error correction capability of 4 memory reinforcement.Meanwhile, in order to make paper establishes step majority logic decoder can detect errors caused by NBTI proposed second ECC circuit detection method based on NBTI designed to detect errors and soft errors distinction SRAM module. AHB bus interface design at the same time, so as to increase the SRAM NBTI detection mechanism can be used in the system integration, and design verification.