| Single chip intelligent power drive integrated circuit (IPD) is a high and low voltage compatible IC,which is comprised of power devices, high voltage driver as well as fault detection circuit, over temperature protection circuit, intelligent control circuit and etc.. Due to the high integration of function and structure, the cost of application system and the application reliability have improved significantly.At present, IPD acting as the key component has been widely applied to these compact and advanced applications such as smart home appliance, new energy vehicles and intelligent robotics. However, these systematic application requirements such as high power, inductive load as well as high switching speed dispute the IPD’s design. The IPD research should concentrate on the methodology to improve the system efficiency, optimize the fault detection method and the protection accuracy and so on. Therefore, these techniques such as power gate driving technique, fault detection and protection method and high precision signal generation technique has been studied in this thesis, leading to some corresponding optimization techniques. In addition, the design is verified based on the 0.5μm 600V BCI SOI process of CSCM. The main works and innovations are concluded as follows.1. Both the mechanism of power devices’switching losses and current/voltage overshoot and the contradiction between them are explorated detailedly. It points out that the individual control of dIcE/dt and dVCE/dt is the key factor to relax this contradiction. Moreover, a power gate driver with self-adaptive driving ability is proposed. The test results indicate that the voltage overshoot can be reduced by 52% without sacrificing the total turn-off losses and a better trade-off can be achieved by using the proposed drive circuit, compared with the conventional one.2. A new temperature sensor utilizing an adaptive nonlinearity cancellation circuit among two base-emitter voltages (VBEPT and VBEIO) of the diode-connected bipolar junction transistors (BJTs) driven in saturation region with a proportional to absolute temperature (PTAT) current and an independent of absolute temperature (IOAT) current, respectively. In this way, the nonlinear effect originated from the temperature dependence of saturation current (IS) drift can be cancelled adaptively through subtraction circuits. The measurements indicate that the proposed temperature sensor can achieve a sensitivity of -9.75 mV/℃ with linearity up to 99.95% over the temperature range of 170℃ (-40℃ to 130℃).3. A novel high-precision current mode bandgap reference (BGT) is proposed. In order to reduce the effect of the offset of the Operation Amplifiers (OPA), the proposed BGR introduces feedback paths to reduce the factor of OPA’s offset voltage. In addition, a cross-coupled structure is dedicated not only to reduce the offset voltage factor further by increasing the Bipolar Junction Transistor’s (BJT) base emitter voltage difference but also to eliminate the mismatch of current mirror. The relative accuracy is increased by 4 times compared with the conventional circuit.4. A new CMOS relaxation oscillator featuring with high linearity is proposed. The high linearity between the frequency and control current is achieved by adopting the floating capacitor and the independent charged and discharged loops to reduced the oscillator’s loop delay for each cycle (from 4·td to 2·td). The measured results show that<0.86% non-linearity in the current-frequency transfer function.5. The other key circuits of IPD, such as the low dropout regulator, hall input stage circuit, three phase logic processing circuit, fault self-recovery circuit and etc. are analyzed and designed in this thesis. Based on the key techniques along with these research results of these core modules, a single chip intelligent power drive integrated circuit is developed. Moreover, the propagation characteristics, switching characteristics and protection function are measured.
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