| With the rapid development of wireless communications industry and the wide adoption of personal wireless products, radio-frequency (RF) receivers are required with better performances. Low-noise amplifier (LNA) is the first-class active module in the RF receiver, and has a significant impact on the performance of the receiver system. As the core module of the RF receiver, Phase-locked loop (PLL) provides the local oscillator signal of the required frequency to the RF receiver. Voltage-controlled oscillator (VCO) is the output module of the PLL loop, it directly determines the tuning range and the phase noise of the local oscillator signal. Therefore, the research and design of high-performance LNA and VCO has great significance and research value.Firstly, taking into account the special nature of SiGe process, this paper summarises the characteristics of SiGe BiCMOS process and analyzes the noise in the device. Then compares the several LNA basic structures and performance differences, and describes the narrowband single-ended LNA design principles. In consideration of the LNA various performance parameters compromise, the designed LNA uses emitter inductance and negative feedback resistance to achieve noise matching and power matching. The post-simulation results show that at the operating frequency 1268.520MHz, the noise figure is 1.05dB, gain is 20.3dB, S11 and S22 are-12.2dB and-11.8dB respectively, the consumption is 13mW.Before the design of VCO, this paper first briefly describes the analysis methods and the design principles of LC VCO, then detailed analyzes the VCO phase noise model and summarizes several common phase noise optimization techniques. In consideration of the VCO various performance parameters compromise, an all NMOS cross-coupled topology is adopted for the designed VCO; four differential switched-capacitor arrays are applied to divide the whole tuning range into sixteen sub-bands, which can realize wideband coverage; a second harmonic filter is used to improve the performance of the phase-noise, a low phase noise wideband LC VCO is designed in 0.13-μm CMOS process. The paper gives a detailed design process, including the layout design, tapeout and test. The post-simulation result shows that the tuning range is 11.6GHz～15.1 GHz, the worst phase-noise at 1MHz offset is-111.2dBc/Hz, and when voltage supplied by 1.2V, the total current consumption is 12.8mA. The chip test results show that the oscillator frequency drops about 1.7GHz, the performance of phase-noise gets a little worse. The VCO performance decline was mainly due to the inaccurate of the high frequency parasitic capacitance extraction and the noise on the voltage control line. |
