Research On Atmospheric Plasma Polishing With Determined Removal Method

With the development of science and technology, the requirement of silicon based material is increasing, and the required smoothness is increasingly high. Surface shape also becomes more complicated, which leads it to be difficult to machine and the processing costs rise. The traditional polishing methods often bring damage to surface, including the lattice dislocation and other defects. It is difficult to achieve higher nanometer scale machining accuracy. Atmospheric plasma polishing adopts non-contact chemical reactive etching, and it is combined with computer control. It can achieve accurate material removal without physical damage.In order to make the removal result of atmospheric plasma polishing quantitative, the key technologies were studied during the research process. Moreover, the experimental platform was built and the key equipment including plasma torch was designed. The Lucy-Richardson algorithm was used to solve the dwell function, and the dwell time was precisely controlled. The edge effect and convolution effect were analyzed, and the corresponding solution methods were proposed which were verified by MATLAB simulating. Besides, the impact of the original surface error on the processing capacity of the removal function was analyzed.In this research, CF4, O2 and He were selected as raw gases. The changed trend of the concentration of each component was analyzed through chemical reaction simulation. In order to find the theoretical guidance for reducing the deposition, the generation and dissipation of sedimentary particles were analyzed in detail. The influence of the ratio of raw gases and processing distance on the deposition were discussed. In the experiment, the change of the concentration of active particles was determined by using spectroscopic method. The experimental results and the simulation results were compared, and the influence of processing parameters on the machining quality was obtained. Combined with theoretical guidance, the machining parameters were optimized. The unit removal function which was obtained by the data fitting has good processing effect. Under the guidance of theory and experiments, the processing time was prolonged, and the deposition effect is weakened.In this research, the simulation analysis was carried out as a processing guide. Technological parameters were studied from the mechanism of gas phase chemical reaction. It has practical significance to the research and the development of atmospheric plasma processing technology.