The Studies On The Properties Of The ZnO Based P/n Heterojunction Devices

ZnO is a wide band-gap semiconductor (3.37 eV at room temperature) with thehigh exciton binding energy of 60 meV. This material has attracted extensive interestin the field of electrical and optical devices because of its multi-functionality. ZnO hasbeen applied in various electrical and optical devices. How to realizeroom-temperature optically pumped lasing of ZnO in the blue and UV range and bluelight emitter diodes has became a focus. This paper is focused on the growth of ZnO based heterojunction, studying theirphysical properties, such as the structural, optical and electrical properties. There arefour main parts of this paper, which can be summarized as follows: ZnO films have been successfully grown by electrochemical assembly method.The structural and optical properties have been studied. We report the success of using electrodeposition technique to form Cu2O filmsand conducted a structural, morphological and optical investigation on Cu2O films. The Cu₂O/ZnO/ITO p-i-n heterojunction has been fabricated using a method ofelectrochemical deposition. The electrical properties of the p-Cu2O/i-ZnO/n-ITOheterojunction are obtained using the current-voltage measurements. The p-i-nheterojunction exhibits a distinct junction property. We propose the energy banddiagram for the heterojunction to explain the electric charge mechanisms. The GaN/ZnO p-n heterojunction has been fabricated by rf magnetron sputteringmethod, the electrical properties are studied.