Design Of 600V Trench FS IGBT

Trench-FS structure is the most advanced structure of the IGBT devices. It is widely used in industrial and consumer applications for it has several advantages, like good tradeoff relationship between conduction voltage drop and forward blocking voltage, good trade-off relationship between the switching losses and the conduction losses, lower manufacturing cost than other structures which have the same current rating. In the market, Trench FS IGBT products are almost from foreign companies. The commercialization of domestic IGBT devices is still committed to the planar structure and the development of the Trench-FS structure is still at the exploratory stage. Independent research on the Trench FS IGBT products that combined with the domestic processing line has very important significance. In this paper, combined with domestic manufacturing conditions, we designed a 600 V Trench FS IGBT device that’s BV=600V, Vce < 2V, 5V < Vth < 6V.The main work of this paper is as follows:1. Combined with the basic process conditions and the desired device structure, designed a manufacturing process that fit for the 600 V Trench FS IGBT device. Optimized and adjusted the epitaxial, field oxide, gate oxide, grooving and other processes through simulation by the process simulator-Tsupreme4, and determined the basic process scheme.2. Based on the basic process scheme, simulated and optimized the parameters of the cellular and the terminal structure through Tsupreme4 and the two-dimensional device simulator-Medici. Simulation results of the final cellular structure were BV = 750 V, Vce = 1.68 V, Vth = 5.5V, t(d)off=100ns, toff=74ns. The terminal structure that includes field plate and FLR was designed. Since the terminal region does not contribute to the current, terminal area should be as small as possible and guarantee the pressure capacity and the reliability. The width of the terminal region finally optimized for 254μm, and the simulation result was BV = 811 V.3. According to the simulation of the device structure and the optimized manufacturing process, completed the layout designation which includes active region, Pad area, and terminal area. Considering the uniformity of the current chip, a gate finger is introduced into the layout. Combined with the 40 A current rating and the terminal region, the final layout area is 4.9 × 4.9mm2.4. Drew the layout by the drawing software-L-edit.Results of this study on Trench FS IGBT will be a certain reference and a catalytic role in the process of releasing products. By optimizing the designation of structure and improving the manufacturing process, we can produce a Trench FS IGBT device that can meet the requirements of electrical characteristics and have high reliability.