Design Of 1200V Reverse Conducting Trench FS IGBT

With the continuous development of the power electronic technology, IGBT(Insulated Gate Bipolar Transistor) has been widely applied in the field of power transmission. Reverse Conducting IGBT is one kind of the novel devices, which integrates the freewheel diode and the IGBT on the same chip, and it has lots of advantage on the cost, packaging size and reliability. It has been developed rapidly in the field of the power electronic technology in our country, but the study on the Reverse Conducting Trench FS IGBT is still not be carried out. It is very important for us to develop the design and manufacture of the Reverse Conducting Trench FS IGBT. From the perspective of the theoretical basis, the design of 1200 V Reverse Conducting Trench FS IGBT is proposed in this paper. A novel Reverse Conducting Trench FS IGBT with fast reverse recovery is also put forward. The main points are as follows:1. The development trend of power electronic devices and the characteristics of the IGBT technology will be introduced in the paper. From the electrical characteristics of Trench FS IGBT, the basic properties of Reverse Conducting Trench FS IGBT will be studied;2. The design of 1200 V Reverse Conducting Trench FS IGBT is the main target of this subject. On the basis of the device structure design, the reasonable fabrication procedure is proposed. Breakdown voltage, conduction voltage, threshold voltage, and turn off time of the 1200 V Reverse Conducting Trench FS IGBT will be studied by the simulation software. The design of terminal structure and layout scheme will be also considered in the paper. The properties of 1200 V Reverse Conducting Trench FS IGBT will meet the goals of design, and the breakdown voltage is 1438 V, conduction voltage is 1.64 V, threshold voltage is 4.38 V and turn off time is 106 ns;3. A novel Reverse Conducting Trench FS IGBT with fast recovery is proposed in this research, with schottky structure introduced to the emitter. Compared with the conventional structure, the reverse recovery time of the fast recovery Reverse Conducting Trench FS IGBT will be reduced by 32%。With the design of the Nresistance zone in the collector, the minimum cell count to eliminate Snapback phenomena will be reduced by 67%。...