Optimum Design And Testing Of A 1200V Field Stop IGBT

With the rapid growth of Chinese economy and continuous development of new energy industry, in order to high-efficiently use energy, we must improve existing power devices to reduce devices self energy consumption. Insulated Gate Bipolar Transistor(IGBT) which has high breakdown voltage, low conduct voltage and some other excellent electric characteristics, play an important role in the field of power electronics and has a broad application prospect. But in China, due to the lack of new generation of IGBT technology(eg. Field Stop Technology and Trench Gate Technology) which lead to a large number of fields that related to the beneficial to the people’s livelihood are controlled by others and it is obviously to find that China badly needs to have own technology. Based on this, it is significantly to study the Field Stop Technology. This paper pay more attention on doping concentration distribution of field stop layer in order to improve FS-IGBT and the main contents are:1. A brief overview of IGBT’s basic theory and the new technology development: such as field stop technology, the carriers store technology,enhance injection technology and focuses on the effect of change the parameters of FS-IGBT models on the electric characteristics to have theoretical guidance for optimizing devices.2. In order to determine the front structure, we make sure process flow under the exiting process situation and then use Sentaurus TCAD to build 1200 V NPT-IGBT model and simulate the electric characteristics which will help us to optimize the parameters of front structure and compare with the following device structure.3. Based on the positive process, we build the FS-IGBT model by simulating the doping concentration distribution of field stop layer on the back of the structure. And then we optimize the electric characteristics of model by adjusting the doping concentration distribution of field stop layer, plasma life time and the doping concentration of collector base on comparing to the actual test results.4. At last we compare the electric characteristics of FS-IGBT model to NPT-IGBT model for discussing the advantages and disadvantages of FS-IGBT and the improvement of parameters of process flow. Furthermore, we can provide a reference for the production of device based on this.