Electric Simulation Of A Silicon Drift Detector Using A Spiral Biasing Adapter

Silicon drift chamber detector, which was the first to be proposed by E. Gatti and P.Rehak in 1983, is based on the principle of the sideward depletion.First, one just takes it as a two-dimensional position sensitive detector. Later, one applys it to the high-resolution X-ray spectroscopy, it was found that the position resolution of the detector and energy sensitivity is very high, so it gradually replaced the traditional Si-PIN detectors, and is widely used in X-spectrometer. In the aerospace and space exploration, it become increasingly important and gets more and more achievements.Silicon drift chamber detector, based on planar technology, since there is only one anode in the center of the up surface of the detector, and the anode can be designed to very small area contact, has the relatively large volume of the detector sensitive area, small capacitance, high sensitivity, energy resolution well, and two-dimensional position resolution. Because of these characteristics, many scientists have beening devoted to the research of silicon drift chamber detector. Silicon drift detector contains mainly two branches so far, containing the linear silicon drift chamber detector and the circular silicon drift chamber detector. Silicon drift chamber detector using spiral divider that is studied in this paper belongs to a circular silicon drift chamber detector. According to the shape of the spiral divider, silicon drift chamber detector can be divided into quadrangular cylindrical, hexagonal prism and cylindrical.This article is based on silicon drift chamber detector using a quadrangular spiral divider as the main object. One simulated and compared the electrical characteristics of silicon drift chamber detector using a quadrangular spiral divider and conventional spiral silicon drift chamber detector by software Sentaurus TCAD. One achieved the result that not only silicon drift chamber detector using a quadrangular spiral divider has the same perfect characteristics, but also may solve the question that conventional spiral silicon drift chamber detector cannot be made the larger array. What we have done is three-dimensional device simulation of silicon drift chamber detector using a spiral divider. It was only proposed in 2014, and was mainly theoretical research that there is no three-dimensional simulation of it before, so we do the work for the first time. In this paper, we do mainly simulation of its potential distribution, electric field distribution and electron density distribution. Through studying these electrical characteristics, one can know that it may form an electron drift orbit in its interior. Through heavy ion incidence model, we also saw a dynamic electronic drift in the detector inside.