Photoelectric Characteristics Study Of InAs/InGaAs/GaAs Quantum Dots-in-a-well

Compared with the traditional crystalline materials, semiconductor structure has many novel physical properties and contains rich physical effects. We can design and produce a variety of high-performance electron transport devices and optoelectronic devices based on physical properties. And low-dimensional quantum effects photodetectors have been widely applied in many fields. Modeling and testing play a very important role in the development and improvement of the device.The dots-in-a-well (DWELL) structures present better optical quality of the quantum dots (QDs) due to strain relaxation and lower dark current due to the lower ground state energy. So, the model of a novel dots-in-a-well photodetector with double barriers was established by using Crosslight Apsys physical model simulation software. I-V, C-V and the photocurrent transient spectroscopy were simulated and analyzed. In addition, the model was optimized after analyzing the results. Light detecting wavelength was extended to 1.7μm and the new model can be regarded as an optical memory cell by discussing the decay process of electrons and holes storaged in the quantum well and the quantum dot, respectively, which can provide the reference for the development and optimization of such photoelectric devices.Finally, this paper established an I-V low-temperature model based on the least square method. The fitting I-V of 4.3K and 90K were obtained and comparing with the test data, which is high simulation accuracy and convenient to use.