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Characteristics Test And Model Analysis Of The New Quantum Effect Photodetectors

Posted on:2015-03-18Degree:MasterType:Thesis
Country:ChinaCandidate:L DingFull Text:PDF
GTID:2428330491451471Subject:Microelectronics and Solid State Electronics
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Nowadays,low-dimensional quantum effects photodetectors have been widely applied in many fields such as medical diagnosis and aerospace.In order to improve their performance,the study of new physical effects and the development of novel principle photodetectors have become focuses of attention.Characteristics testing and model analysis help us to understand the properties and the associated parameters of the photodetectors,which plays an important role in the research and development process.Based on custom-made optical test platforms,the characteristics such as ?-?performance and spectral response of the 1×64 and 2×8 novel quantum effect photodetectors were detailed measured in this paper.Using a standard photodiode,we realized the calibration of the device spectral response.The results manifestly showed that they owned an internal quantum multiplier mechanism.And the good detection ability for ultra-weak light signals makes them unique candidates for biological detection.Also,the ability of our custom-tailored readout circuit was verified by testing the spectral voltage response of our docked sample.Meanwhile,the model of a novel quantum well-quantum dot photodetector with double barriers was established by using Crosslight Apsys physical model simulation software.Preliminary simulations and analysis about the dark current and the photocurrent characteristics were carried out.And the established model provides model reference for further optimization of this device,which helps to improve its properties and performance.
Keywords/Search Tags:Semiconductor photodetector, Quantum well, Quantum dot, ?-? characteristics, Spectral response, Device physical modeling
PDF Full Text Request
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