Consider The Quantum Effects Of The Mosfet Device Modeling And Validation

CMOS IC follows the Moore's Law all along.The feature size of CMOS device is reduced into nanoscale regime at the first decade of the 21st century. Research on the nano-scale CMOS device faces the technology complexity and physics limitations. An accurate yet concise MOSFET device model is the key basis for a CMOS IC design tool. A method for self-consistent numerical algorithm of the Schrodinger's and Poisson's equations is proposed. A 1-D threshold voltage model is presented. By taking quantum-effects for short-channel into consideration, a 2-D quantum-modified threshold-voltage model is developed by solving the quasi-2D Poisson's equation. In order to verify the validity of the model, we conduct a parameter-extraction (PE) experiment numerically. We extract the DC parameters from a suite of different W/L devices under a certain technology condition. Then we simulate a digital circuit use the new extracted DC parameters. A good agreement between the model and the simulated results is obtained. The modeling and simulation method proposed in the paper may be adapted in research and development of nano-scale device and integrated circuits.