The Design And Implementation Of A Diode Laser For Cooling Of Be~+

In recent years, laser cooling of beryllium ions (Be+) has played an important role in contemporary research, such as quantum information, plasma physics, high precision measurement of physics, and so on. One of the major challenges of working with beryllium ions is that the energy transitions for its laser cooling requires the ultraviolet region radiation with wavelength at 313nm. A traditional approach to generate the 313nm laser required for experiments with Be+is to double the wavelength of 626 nm radiation, which can be obtained by the sum-frequency of fiber laser of 1051 nm and 1550 nm, or by the sum-frequency of YAG laser at 532nm and solid laser at 760nm. In both methods, the laser systems are expensive and complex. However, in our scheme, the 626 nm diode laser which can be produced by refrigeration of semiconductor is low cost, and the overall laser system is simple, but fulfill the demand for Be+ laser cooling. So our method of realization of 626 nm diode laser can play an important role in the laser cooling of Be+ and other related experimental research.In this thesis, we first introduce the background of the invention of 626 nm diode laser. In the second chapter, we introduce the specific scheme of the laser design, including the specific requirements of laser cooling of Be+, the working principle and characteristics of the semiconductor laser. And taking the advantage of semiconductor laser’s temperature characteristic, we use whole second refrigeration scheme to move the gain center of diode laser from 633nm to 626nm. At last we introduce the methods of stabilization of the frequency of 626nm.In the chapter three, we introduce the laser specific implementation process.In the chapter four, the performance of the laser is tested and analyzed in detail,and realizes long-term stable output of the laser at 626 nm.The final chapter summarizes all the work and introduce the next step of our work plan of 626nm diode laser.