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Design Of Radio Frequency Power Amplifier For 2GHz Frequency Band

Posted on:2017-04-12Degree:MasterType:Thesis
Country:ChinaCandidate:Z JinFull Text:PDF
GTID:2308330482978476Subject:Electronic Science and Technology
Abstract/Summary:PDF Full Text Request
RF PA is one of the important components of the transmitter link in modern wireless communication systems. They are used widely in radar, Electronic warfare, satellite communications, aerospace and microwave communication, etc. In recently several years, communication equipment have been developed rapidly and meanwhile wireless communication technology move towards to 5G gradually, which puts more strict demand on RF PAs. Low power, small area, wide bandwidth, multi-mode and high data rate have become trend of future. Therefore, the research of broadband PA has very important significance.Dalian Maritime University institute of antennas and microwave is entrusted by Liaoning Putian digital Limited by Share Ltd to development of microwave communication teaching experimental equipment. The author is fortunate enough to be involved in the research work of broadband pa project. The research and design of broadband radio frequency power amplifier are discussed in this paper. The main works as follow:(1) The design of broadband matching network with low pass topology and improved band-pass topology is designed, and make a detailed analysis of these two methods, Developed a broadband matching design software using MATLAB, which greatly simplify the design procedure and shorten the time of design improvements.(2) A narrow band RF PA is designed and implemented. The DC bias circuit is designed with the sector structure, and the yoke flow is more accurate. The optimum impedance of the transistor is obtained by using the load pull technique, and the design of the matching circuit is realized by using the mixed parameter element. Software simulation and optimization of the PA to determine the best structure, PCB design using Altium Desiger 14, and the test results are analyzed.(3) A broad band RF PA is designed and implemented. Using GaN HEMT device NPTB00004, The DC bias circuit is designed with the double sector structure, The best matching impedance in the frequency band is obtained by the bidirectional traction technique. Make a work in 1.5-2.5GHz, the efficiency more than 50% of the broadband PA, then the actual processing and testing are carried out, and the results are analyzed.
Keywords/Search Tags:RFPA, GaN, MATLAB, Broadband, Impedance matching
PDF Full Text Request
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