Key Performance Research And Improvement Of The Over-voltage Protector

As a new type of voltage suppressor, semiconductor overvoltage protection device is wildly used in surge protection circuit in communication equipments due to its fast response speed, small size, stable performance, short circuit protection and strong absorption for surge current per unit area. This thesis mainly focuses on the currently widely used switch type semiconductor protection device with complex mechanism. The relationship between each electronic parameter and process is analyzed, and the critical process control point and control method are studied. The topic aimed to improve the performance of the existing semiconductor protection device, and enhance domestic design level.Firstly, the basic structure of semiconductor protection devices is analysized, the device model is established, and the working principle of each working conditions as well as the trigger mechanisms of the device is studied. The mechanisms of important working state, such as forward voltage drop, forward blocking and gate trigger, are probed as the focus, to provide a theoretical basis for subsequent improvement. Secondly, the basic parameters and application methods is analyzed, and meanwhile the voltage following application, and the parameters that needed to improve is proposed. Thirdly, on the basis of this, combing with the physical structure and process characteristics of the device, the process key factors is researched and corresponding measures are proposed. Related experiments are conducted, and a comprehensive improvement program is optimized. Lastly. the reliability of optimization scheme is proved by batch production. The performance of the product is eventually improved.