Uncooled Infrared Imaging System Based On MEMS Technology Research

With the development of The Times, in all fields of social life, the infrared imaging technology has a wide range of applications, not only include the traditional military, medical and other regions, in the emerging positioning system, new energy, automotive systems, and other fields, the application of the infrared imaging technology is also growing. Especially not refrigeration infrared imaging system, people put more attention and concerns into its high reliability, low cost and high performance. The research of this paper is focused on uncooled infrared imaging technology,its core principle is that using System(MEMS, Micro- company- Mechanical System) sensor and optical readout signal System. Developed based on the above theory, light- mechanical cantilever MEMS hollow out silicon nitride thin film infrared detector, and through the MEMS technology, set up a uncooled infrared imaging system, a series of leading technology of imaging results. Main achievements such as the following:1, Devices is the focus of this paper is the infrared chips, and adopted in the design of Si Nx/Al double material combination processing technology, this kind of material combination and innovation points of this paper and the bright spot.2, using the new algorithm, this paper has designed the latest support without silicon substrate and thermal isolation deformation superposition of infrared focal plane array(FPA), at the same time, on the performance optimization and the thermal dynamic modeling. To obtain the new FPA, complete the optimization of the method and standard of whole structure. In this paper, and in the production process for the effective optimization, and simplified. Based on the above theory, considering the tolerance of production process, the design unit of the pixel size is 200 um number is 240 * 240 * 50 um, arrays, and pixel size 200 um number is 640 * 480 * 50 um, array of two kinds of FPA chips.3, to design and develop a series of single silicon nitride(Si Nx) hollow out film cantilever FPA standard production process and production process. Especially rate control, integrated silicon etching technique, low stress of silicon nitride(Si Nx) membrane stress control, and other key technologies to develop and carried on the thorough research of the system, make the FPA array device blind yuan rate control under 10%.4, using the new structure of two kinds of FPA, and the improved FPA optical readout method, the component using MEMS technology of uncooled infrared imaging system device, collected a series of outdoor objects, the human body, integrated circuit board and a series of static and dynamic thermal imaging images. Acquisition by FPA pixel size is 200 um number is 50 * 50 um, array chip system performance critical reference data- noise equivalent temperature difference(NETD) down to 300 m K, the class technology and achievement have reached those of the domestic and international leading level.