Preparation Of Three-dimensional Photonic Crystal Based On Macroporous Silicon

Photonic crystals are periodically arranged by the different dielectric constants of the dielectric material. Because of the unique nature of photonic band gap, they can be widely used in optics devices, optical integration, detection and infrared sensors and other fields. Electrochemical corrosion has a lot of advantages, such as low cost, simple process, short production cycle, and controllable features, so it will have more practical value than the other fabrication methods of photonic crystals in the future.3D triangular lattice mask structure photonic crystals were prepared on n-Si(100) wafers by electrochemical etching and shaping technology and semiconductor micro fabrication technology. Through studying influence of etching current density on the macropore morphology and hole depth, the author got the relationship between the channel length and the etching time, then the relation of JPS at the pore tip and etching time was indirectly presented. Based on above relations, the best corrosion current was confirmed, was prepared. The experimental conditions for the preparation of silicon-based photo-electrochemical three-dimensional photonic crystals aperture control proposed technical support.FDTD was used to simulate the lattice arrangement, the channel pore and the dielectric constant influences on the band gap of the three-dimensional macro-porous silicon photonic crystals. The largest band gap parameters were determined and they provide a theoretical basis for subsequent experiments.