| Silicon Carbide (SiC) is an attractive semiconductor material for the applications of high power, high temperature, and high frequency devices due to its excellent physical properties such as a wide bandgap, high breakdown voltage, high thermal conductivity, and high saturation electron drift velocity. 4H-SiC high voltage Schottky barrier diode (SBD) is a potential candidate for the application in high frequency circuit and electrical power system.To improve the reverse breakdown characteristics of the 4H-SiC SBD, the influence of the geometrical parameters on the blocking characteristics of the 4H-SiC SBD with JTE structure have been studied in detail utilizing DESSIS by changing the geometrical parameters. The optimization and methodology for designing the 4H-SiC SBD are presented. A analytical model for the surface potential and electrical field distributions of 4H-SiC SBD with JTE terminations have been developed by solving 2-D Poisson's equation. The analytical results from the proposed models show a good agreement with the numerical simulation results and provide an effectual method to achieve the optimum 4H-SiC high voltage SBD.Finally, the key fabrication processes required to fabricate the high voltage 4H-SiC SBD with different edge terminations are discussed. The 4H-SiC SBD mask and device process flow are presented. |
