Study Of High Voltage 4H-SiC Schottky Barrier Diode And Junction Termination Technology

Silicon Carbide (SiC) is an attractive semiconductor material for the applications of high power, high temperature, and high frequency devices due to its excellent physical properties such as a wide bandgap, high breakdown voltage, high thermal conductivity, and high saturation electron drift velocity. 4H-SiC high voltage Schottky barrier diode (SBD) is a potential candidate for the application in high frequency circuit and electrical power system.To improve the reverse breakdown characteristics of the 4H-SiC SBD, the influence of the geometrical parameters on the blocking characteristics of the 4H-SiC SBD with JTE structure have been studied in detail utilizing DESSIS by changing the geometrical parameters. The optimization and methodology for designing the 4H-SiC SBD are presented. A analytical model for the surface potential and electrical field distributions of 4H-SiC SBD with JTE terminations have been developed by solving 2-D Poisson's equation. The analytical results from the proposed models show a good agreement with the numerical simulation results and provide an effectual method to achieve the optimum 4H-SiC high voltage SBD.Finally, the key fabrication processes required to fabricate the high voltage 4H-SiC SBD with different edge terminations are discussed. The 4H-SiC SBD mask and device process flow are presented.