Analysis And Design Of Self-clamping IGBT

Currently, China is the world’s largest country for automobile production and sales. In the pursuit of small, smart, electric, security trends, the automotive electronics market scale grows rapidly, so the research and development of power semiconductor devices which are applied in the field of automotive electronics also will be of concern. In the late 1990 s, Self-clamping IGBT(Insulated Gate Bipolar Transistor) which is specially designed for automotive ignition introduces into the market, and is favored by many semiconductor manufacturers in the world, so it get significant improvements and upgrades in product performance. Due to the late start of the IGBT manufacturing and relatively backward manufacturing processes and technology, the domestic power semiconductor manufacturers pay more attention to discrete IGBT products. Now self-clamping IGBT product has no domestic brands, or even the lack of relevant academic research.In this paper, on the basis of cooperation project with a well-known domestic power semiconductor company, Working mechanism analysis and product design are conducted for self-clamping IGBT. The main parameters are: clamping voltage is 420 V, threshold voltage is 1.5~2.2V, on-state voltage is 1~1.3V, ESD capability is up to 4000 V, SCIS capacity reaches 300 mJ, reverse breakdown voltage is greater than 30 V, G-E protection diode breakdown voltage is 14 V, G-E resistance is 14K?, gate resistance is 70?. The main purpose of this paper is to provide some reference significance for the subsequent development of related products.The main contents of this paper are as follows:1. Summarize structural framework of self-clamping IGBT, By comparing them, select the reasonable structure type. Analysis it works by simplified application circuit, and a detailed analysis for the meaning and value of parameters is carried out.2. As a integrated device, except IGBT part, self-clamping IGBT also has diodes and resistors. the latter are obtained by suitable impurity implantation into undoped polysilicon. Based on project partner’s technology platform, design process. Set specific parameters for the self-clamping IGBT. IGBT’s cell and terminal are simulated and optimized by Tsuprem4/Medici software, The diodes and resistors are analoged and compromised in the way of utilizing Silvaco software. Conduct layout design and drawing with layout design rules provided by the project partners.3. When the process and layout are determined, carry on tapeout test. Due to various factors, the current test just get some static parameters. Specific results are: clamping voltage is 410 V, threshold voltage is 1.8V, G-E diode breakdown voltage is up to 13.5V, G-E resistance is 14.3K?, the reverse breakdown voltage is 37 V. The result shows that tapeout data basically meets the design requirements.