Research Of Electrical Properties Of Field Effect Transistor Consider Quantum Effect

Field Effect Transistor(FET)is a voltage controlled type semiconductor devices, people focus on it because of its simple to manufacture, easy to implement, stable performance, etc, and it is applied in the integrated circuits as amplification and rectifiers. As representative of field effect transistor, the metal-oxide-semiconductor field effect transistor(MOSFET) is widely used in large-scale integration and very large-scale integration. Highly integrated device makes its size smaller and smaller. As the transistor size reaches nanometer level, its geometry size can be compared with electron wavelength, the quantum effect will be the major effect; we can’t ignore the influence of quantum effects on the devices.The research of 2DEG is the basic research of quantum effect on MOSFET. Fang and Howard proposed Fang-Howard(FH) wave-function to describe the 2DEG, since Stern and Howard used variational method to determine the parameters of the wave-function; the results have been widely used in quantum effect devices. In research of tunneling effect on ultra-thin oxide layer MOSFET, the wave-function penetrate the Si/SiO2 interface, the penetration wave-function at the Si/SiO2 has a considerable value rather than be cut off at interface. Meanwhile most of calculation models relate to tunneling effect use Stern wave-function results, however, the assumption of Stern wave-function is that the wave-function is cut off at interface.The main work and conclusion in this thesis are listed as follows:�'� On the basic of Stren wave-function, we propose more accurate and simpler wave-function to describe 2DEG. The simultaneous Schr?dinger-Poisson equation determines the parameter of the wave-function.�'� In research of tunneling effect on ultra-thin oxide layer MOSFET, we make shift operation to Stern wave-function to propose penetration wave-function; We make finte barrier correction to fit with the actual MOSFET band structure. The non-zero wave-function at interface、tunneling propbaty、ground-state energy in the tunneling modern are all derivated from finite barrier.